Texas Instruments Releases Reference Design for a 99% Efficient GaN Inverter Power Stage - News
Texas Instruments Releases Reference Design for a 99% Efficient GaN Inverter Power Stage - News
TI introduces industry's first automotive GaN FET with integrated driver, protection and active power management | news.ti.com
More Suppliers Unveil High-Voltage Integrated GaN FET Solutions- 21 September 2021 - IEEE Power Electronics Magazine
How GaN FETs with integrated drivers and self-protection will enable the next generation of industrial power designs - Power management - Technical articles - TI E2E support forums
PMP22089 reference design from Texas Instruments
Powering Tomorrow's Data Centers with TI GaN | Data centers are looking for ways to increase power efficiency and density. See how the industry's first end-to-end GaN solution revolutionizes data... | By
TI's LMG1210 MOSFET and GaN FET Driver for High-Frequency Applications
LMG3410R070 data sheet, product information and support | TI.com
Revolutionize High-Performance Power Conversion With TI's 600-V GaN FET Power Stage From: Texas Instruments | Automation World
LMG1210 200V Half-Bridge MOSFET & GaN FET Drivers - TI | Mouser
Gallium nitride: Understanding TI's portfolio and how to use it to enhance industrial designs | TI.com Video
Texas Instruments' LMG1020 Low-Side GaN Driver, Ideal for High-Speed LiDAR and TOF Applications, Now Shipping from Mouser España
TI GaN FETs Enable EVs and Industrial Power Designs - EE Times
LMG1205HBEVM Evaluation board | TI.com
LMG3410R070 data sheet, product information and support | TI.com
Gallium nitride (GaN) ICs | TI.com
Gallium Nitride (GaN) - TI | Mouser
GaN Power Stage Allows High-Density Power Conversion Designs
LMG34XX-BB-EVM | Buy TI Parts | TI.com
Yole Group - Follow the latest trend news in the Semiconductor Industry
TI adds small and fast drivers to GaN power portfolio
Gallium nitride (GaN) ICs | TI.com
LMG5200EVM-02 GaN Power Stage Evaluation Module - TI | Mouser
Texas instruments launch 600V/12A GaN IC
LMG3410R070 600V 70mΩ GaN Power Stage - TI | Mouser
TI reveals industry's first 80-V half-bridge GaN FET module
